摘要
针对半导体发光二极管 (LED)出光效率低下的问题 ,提出了一个在LED顶部引入周期性微结构的新设想。根据这一设想 ,采用简单的微加工技术研制成功带有环形槽微结构的圆台形InGaAlP量子阱LED。结果表明 ,这种新型LED在竖直方向的出射光强比不带微结构的LED有明显增强。
To solve the problem of low extractive efficiency in semiconductor light emitting diodes(LED),a proposal of introducing microstructures onto the top of LED was presented.Based on this idea,the InGaAlP quantum wells LEDs with centric ring-grooves microstructures have been successfully prepared by the conventional micro-fabrication.As a result,the vertical extractive light intensity from the novel LED was obviously stronger than that of the LED without microstructures.This success provides a new method for improving extraction efficiency from LED.
出处
《北京大学学报（自然科学版）》
CAS
CSCD
北大核心
2003年第3期331-335,共5页
Acta Scientiarum Naturalium Universitatis Pekinensis
基金
国家自然科学基金 ( 698962 60
60 0 770 2 2
60 2 760 3 4)
集成光电子国家重点实验室开放课题资助项目
