摘要
用磁控溅射方法制备了系列 (Fe0 .86 Zr0 .0 33Nb0 .0 33B0 .0 6 8Cu0 .0 1 ) x(Al2 O3) 1 -x颗粒膜样品 ,体积百分比x从 0 .3 3～ 0 .63 ,样品厚度约为10 0nm。室温下在Fe0 .86 Zr0 .0 33Nb0 .0 33B0 .0 6 8Cu0 .0 1 体积百分比x =0 .43时得到 17.5 μΩ·cm的最大饱和霍耳电阻率 ,比纯铁磁金属提高了 3～ 4个量级。对其磁性和微结构进行了研究 ,样品霍耳电阻率随外场的变化曲线 ρxy～H与磁场平行于膜面时的磁化曲线M～H有相似性 ,说明霍尔电阻率 ρxy与磁化强度M相关。样品电阻率 ρxx随金属体积百分比x的减小而增加 ,在x =0 .43附近发生突变 ,从金属导电变为绝缘体。
A series of (Fe 0.86 Zr 0.033 Nb 0.033 B 0.068 Cu 0.01 ) x (Al 2O 3) 1- x granular films with thickness d =100 nm were fabricated using magnetron sputtering technique, with x ranged from 0.33 to 0.63. At room temperature maximal saturated Hall resistivity 17.5 μΩ·cm was obtained at x =0.43. This value is greater by 3～4 orders of magnitude than pure ferromagnetic metals. The microstructure and magnetic properties of films were investigated. The curve of ρ xy ～ H is similar with that of M～H , indicating that ρ xy is related to M . Near x =0.43, resistivity ρ xx of samples increase abruptly with the decrease of x , from metal conducting to insulator. The possible mechanism for this phenomenon related to microstructures was also studied.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2003年第5期565-567,共3页
Chinese Journal of Rare Metals
基金
国家重点基础研究发展规划项目 (G19990 64 5 0 8)
国家自然科学基金委员会面上项目 ( 5 0 0 72 0 0 7)资助
关键词
颗粒膜
霍耳效应
微结构
granular film
hall effect
microstructure
