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GaAs-GaAlAs量子阱中光极化子 被引量:2

Localized Optical Polaron in a GaAs-GaAlAs Quantum Well
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摘要 本文计及子带跃迁和双声子过程,计算了限制在量子阱中光极化子能级,给出了自陷能和重正化质量数值计算结果,它是阱宽的函数.发现自陷能和有效质量在二维结果和三维结果之间,子带跃迁和双声子过程对自陷能的贡献不是很重要的. The energy levels of an optical polaron localized in a quantum well are calculated.The sub- band-transition proceases and the two-phonon processes are included in our calculation.The numerlcal results for the self-trapping energy and the renormalized mass of the polaron in a GaAs-Ga.Al_(1-x)As quantum well are given as functions of the thickness of the well.It is found that both the self-trapping energy and the effective mass in a quantum well lie between that in 2D and 3D systems.The contribu- tion of two-subband and two-phonon processes to the self-trapping energy is not important.
作者 梁希侠 王旭
出处 《内蒙古大学学报(自然科学版)》 CAS CSCD 1992年第1期81-87,共7页 Journal of Inner Mongolia University:Natural Science Edition
关键词 量子阱 极化子 量子声子作用 quantum well electron-phonon intercaction polaron.
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