摘要
高寿命、低补偿的P型高阻硅单晶是制作激光探测器的重要材料。寿命是P型高阻硅单晶材料的重要参数。作者选择了3组N型多晶硅原材料进行试验,其中每组2个样品,共为6个样品。在实验的基础上,分析了影响P型高阻硅单晶材料寿命的因素。研究结果表明,P型高阻硅单晶材料的寿命不仅取决于晶体的完整性和材料的纯度,而且还与原材料和成晶工艺有密切关系,同时作者提出了提高P型高阻硅单晶的寿命的几点建议。
The lifetime is the important parameter of Ptype highresistance silicon singlecrystal materials. The result of this test shows that the lifetime of Ptype highresistance silicon singlecrystal materials not only rests with the integrality and the purity, but also the raw materials and the crystalforming processing. Moreover, the authors put forward how to improve the lifetime of Ptype highresistance silicon singlecrystal materials.
出处
《成都理工大学学报（自然科学版）》
CAS
CSCD
北大核心
2003年第5期547-550,共4页
Journal of Chengdu University of Technology: Science & Technology Edition
关键词
寿命
缺陷
纯度
P型高阻硅单品
lifetime
disfigurement
purity
P-type high-resistance silicon single-crystal
