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重离子微束单粒子翻转与单粒子烧毁效应数值模拟 被引量：4

Numerical Simulation of Heavy Ion Microbeam for Effects of Single Event Upset and Single Event Burnout
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摘要 　用束径0 4μm的微束重离子数值模拟了单粒子翻转SEU和单粒子烧毁效应SEB.单粒子翻转给出了不同离子注入后漏区的电压(电流)随时间变化规律;计算了CMOSSRAM电路的单粒子翻转;给出了收集电荷随LET值的变化曲线并给出了某一结构器件的临界电荷;VDMOS器件单粒子烧毁给出了不同时刻沿离子径迹场强、电位线、电流和碰撞离化率的变化. Effects of SEU and SEB are simulated with 04?μm diameter microbeam. SEU for drain region of MOSFET and CMOS SRAM are calculated. Collective charge depending on LET for specific device structure is calculated for different ions. LET and critical charge are provided. SEB for VDMOS is simulated and electric field, potential line, current, rate of impact ionization are given at different times along ion tracks. It is very important for heavy microbeam test physics models which have been set up.
作者 郭红霞 陈雨生 周辉 贺朝会 耿斌 李永宏
机构地区 西北核技术研究所
出处 《计算物理》 CSCD 北大核心 2003年第5期434-438,共5页 Chinese Journal of Computational Physics
关键词 重离子微束 单粒子翻转 单粒子烧毁 数值模拟 SEU SEB 集成电路 制造工艺 heavy ion microbeam single event upset single event burnout numerical simulation
分类号 TN405 [电子电信—微电子学与固体电子学] O571.6 [理学—粒子物理与原子核物理]
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参考文献7

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同被引文献32

  • 1郭红霞,陈雨生,张义门,王伟,赵金龙,周辉.n沟VDMOSFET单粒子烧毁的二维数值模拟[J].核电子学与探测技术,2004,24(6):608-611. 被引量：3
  • 2刘征,孙永节,李少青,梁斌.SRAM单元单粒子翻转效应的电路模拟[J].Journal of Semiconductors,2007,28(1):138-141. 被引量：12
  • 3贺朝会,李永宏,杨海亮.单粒子效应辐射模拟实验研究进展[J].核技术,2007,30(4):347-351. 被引量：18
  • 4杨世宇,曹洲,薛玉雄.功率MOSFET器件单粒子烧毁^(252)Cf源模拟试验研究[J].原子能科学技术,2007,41(3):361-365. 被引量：2
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  • 7TITUS J L, WHEATLEY C F. Experimental studies of single event gate rupture and burnout in vertical power MOSFETs [J].IEEE Trans Nucl Sci, 1996, 43 (2):533- 545.
  • 8STASSINOPOULOS E G, BRUCKER G J, CALVEL P, et al. Charge generation by heavy ions in power MOSFETs, burnout space predications, and dynamic SEB sensitivity [J]. IEEE Trans Nucl Sci, 1993, 39 (6): 1704- 1711.
  • 9NICHOLS D K, COSS J tL , MIYAHIRA T F, et al. Heavy ion and proton induced single event transients in comparators[J]. IEEE Trans Nucl Sci, 1996, 43(6) : 2960-2967.
  • 10HUTSON J M, RAMACHANDRAN V, BHUVA B L. Single event-induced error propagation through nominally off transmission gates [J]. IEEE Trans Nucl Sci, 2006, 53(6): 3558-3562.

引证文献4

二级引证文献18

计算物理
2003年 第5期

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