摘要
本文用正电子湮没多普勒展宽线性参数和正电子湮没寿命谱的方法研究了 Cu-25.75wt%Zn-4.01wt%Al 合金不同淬火处理后的缺陷组态及其回复行为.发现有两类淬火空位存在,一类在室温以下即迁位;另一类在室温到200℃温度范围内迁移下沉,并且在此温度范围内空位团崩塌而形成位错环,测得这个回复阶段空位型缺陷的迁移激活能为 E_r^M=0.91±0.10eV.此外,估算出这种合金的空位表现形成能约为0.71eV.
Specimens of a Cu-25.75wt% Zn-4.01wt% Al alloy are quenched directlyor step-quenched from 850℃ The configuration and recovery behaviorof defects are investigated by means of the positron annihilation.Theresults showed that there were two kinds of vacancy in this alloy:onestarted to migrate below room temperature and the other recovered betweenroom temperatue and the other recovered between room temperature and200℃,the vacancy clusters collapsed and formed dislocation loops in thistemperature range.The activation energy for migration of vacancytypedefects,E_v^m0.91±0.10eV,is obtained,the formation energy of vacancy,E_A^V=0.71eV,is estimated in the alloy.
出处
《兰州大学学报（自然科学版）》
CAS
CSCD
北大核心
1992年第3期55-60,共6页
Journal of Lanzhou University(Natural Sciences)
基金
甘肃省自然科学基金
关键词
正电子湮没
形状记忆
淬火缺陷
positron annihilations
shape memory alloys
quenching defects
ageing
