摘要
室温条件下Si表面的单原子操纵在基础研究和微电子应用两方面都具有十分重要的意义，本文详细介绍了利用STM在Si（111）7×7、St（100）－2×1：H表面进行单原子操纵和加工原子级人工微结构的基本原理和技术方法。综述了近年来这一领域研究工作的最新进展，并探讨单原子操纵技术和激光造键技术相结合从而实现选键化学反应或"分子手术"的可能性和前景。
Single atommanipulation on Si surface under room temperature is very important for both basic research and microelectronic applications. In this article, the method of single atom manipulation on Si surface by using STM has been introduced. A summary of recent progresses in this field is reviewed- We also discussed the possible impact of advanced STM technique on future physics and chenlistry.
出处
《世界科技研究与发展》
CSCD
1997年第3期71-78,共8页
World Sci-Tech R&D
