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单电子晶体管及其基本特性的仿真分析 被引量：4

SINGLE ELECTRON TRANSISTOR AND SIMULATION ANALYSIS OF IT′S BASIC CHARACTERISTICS
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摘要 提出了一种应用PSpice仿真SET的方法,该方法通过所设计的宏模型可实现SET的基本特性仿真。仿真结果表明,所设计的宏模型具有合理的精确度。 A simulation method for SETs by applying PSpice is presented.With the designed macromodel,the basic characteristics of SETs is simulated.The simulation results show that the macromodel is reasonably precise.
作者 陈学军 蔡理
机构地区 空军工程大学工程学院
出处 《青岛大学学报（工程技术版）》 CAS 2003年第2期5-8,共4页 Journal of Qingdao University(Engineering & Technology Edition)
基金 陕西省自然科学研究基金资助项目(2002F34)
关键词 单电子晶体管 仿真 SPICE宏模型 工作原理 库仑阻塞效应 量子隧穿效应 量子尺寸效应 库仑振荡 库仑台阶 single electron transistor macro-model coulomb oscillation coulomb staircase
分类号 TN32 [电子电信—物理电子学]
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参考文献5

  • 1赵正平,郭荣辉.单电子器件[J].微纳电子技术,2002,39(1):17-21. 被引量：1
  • 2Schenk A, Wolfgang Fichtner. Single-electron device aimulation[J]. IEEE Trans Electron Devices,2000,47(10):1811.
  • 3Yu Y S,Lee H S, Hwang S W. SPICE macro-modeling for the compact simulation of single electron circuits[J]. Journal of the Korean Physical Society, 1998,33:269-272.
  • 4Klunder R H, Hoekstra J. An analytical description for the single electron current regime of the metal single electron tunnel transistor[A] .Proceedings of SAFE 2001 [C].the Netherlands:STW,2001:86-91.
  • 5Yu Y S, Hwang S W, Doyeol (David) Ahn. Macromodeling of single-electron transistors for efficient circuit simulation[J].IEEE Trans Electron Devices, 1999,46(8) : 1667 - 1671.

二级参考文献6

  • 1Lambe J,Jaklevic R C.Charge-quantization studies using a tunnel capacitor.Physical Review Letters,1969,22 (25): 1371～1375.
  • 2Likharev K K.Single-electron transistors.electrostatic analogs on the DC squids,IEEE Trans Magn,1987,23:1142～1145.
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  • 4Jacob E B,Gefen Y,Mullen K et al.Coherent versus noncoherent Bloch oscillations in the presence of direct and alternating fields.Physical Review B,1998,37(13): 7400～7418.
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同被引文献18

  • 1陈学军,蔡理,孙铁署.单电子晶体管积分器及其性能分析[J].固体电子学研究与进展,2004,24(2):178-181. 被引量：3
  • 2Wasshuber C.Computational single-electronic s[M].New York:Springer Verlag,2001.
  • 3Klunder R H,Hoekstra J.An analytical description for the single elect roncurrent regime of the metal single electron tunnel transistor[A].Varwijk H .Proceedings of the Workshop on Semicinductor Advances for Future Electronics ( SAFE)[C].Veldhoven,the Netherlands,2001.86-91.
  • 4Roermund A V,Hoekstra J.Design philosophy for nanoelectronic systems,from SETs to neural nets[J].International Journal of Circuit Theory and Appl ications,2000,28(6):563-584.
  • 5Lee S H,Kim D H,Kim K R,et al.A practical SPICE model based on the p h ysics and characteristics of realistic single-electron transistors[J].IEEE T rans Actions on Nanotechnology,2002,1(4):226-232.
  • 6Mahapatra S,Ionescu AM,Banerjee K.Quasi-analytical modeling of drai n current and conductance of single electron transistors with MIB [A].Proc.o f 32nd European Solid-State Device Research Conference-ESSDERC 2002[C] .Florence,Italy:University of Bologna,2002.
  • 7Wasshuber C. Computational Single-Electronics[M]. Wien New York: Springer Verlag. 5, 2001.
  • 8Roermund A, Hoekstra J. Design philosophy for nano-electronic systems from SETs to neural nets[J]. International Journal of Circuit Theory and Applications Int. J. Circ. Theor. Appl. 2000, 28:563-584.
  • 9Mahapatra S, Ionescu AM, Banerjee K. Quasi-Analytical modeling of drain current and conductance of single electron transistors with MIB [J]. ESSDERC 12,2002, Florence.
  • 10Muller H O, Furlan M. Modelling Background Charge Rea rangements Near Single-electron Transistors as A Poisson Process. Europhys. Lett, 2001, 55(2): 253-259.

引证文献4

二级引证文献1

青岛大学学报（工程技术版）
2003年 第2期

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