期刊文献+

合成金刚石单晶体层错的同步辐射形貌研究 被引量:2

RESEARCH ON STACKING FAULTS IN SYNTHESIZED DIAMOND CRYSTALS BY SYNCHROTRON RADIATION TOPOGRAPHY
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摘要 利用同步辐射对合成金刚石晶体中面状缺陷进行了形貌学研究。在晶体中观察到多个层错和一个由两个层错三角形组成的层错四面体。计算了层错及层错四面体各个边界的方向指数 ,确定了各个层错的面指数。根据层错的消像规律 ,确定了各个层错的位移矢量。除一个层错为Frank型简单层错外 ,其余层错皆为既具有Frank位移 ,又具有Shockley位移的复合型层错 ,层错尺寸大小在 0 68~1 1 5mm。 Planar crystal defects in a synthesized diamond were studied by synchrotron radiation topography. Several stacking faults and a tetrahedron composed of two stacking faults in triangular were observed within the crystal. The direction index of each boundary of the faults was calculated and so was the planar index of the stacking faults. The displacement vectors of the stacking faults were determined by the disappearing image laws of the faults. All the stacking faults possess the characters of both frank and shockley types with only one exception. The forming mechanism of the faults was discussed. The stacking faults vary in size between 0.68 and 1 15 mm, which have not yet been found in both synthesized and natural diamonds.
出处 《矿物学报》 CAS CSCD 北大核心 2003年第2期103-108,共6页 Acta Mineralogica Sinica
基金 北京正负电子对撞机国家实验室重点课题基金资助项目 河北省教育厅博士基金资助项目 燕山大学博士基金资助项目
关键词 合成金刚石 同步辐射 石单晶体 层错 形貌特征 位移矢量 晶体缺陷 synthesized diamond stacking fault synchrotron radiation
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参考文献12

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共引文献2

同被引文献19

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