摘要
介绍了一种利用集成互补结型场效应管的简单复合而构成的负阻器件 ,并且对该负阻器件的温度特性进行了分析 。
Introduces a type of negativeresistance device constructed by integrated complementary JFET structure, and analyses its temperature property, then puts forward reference for designing negativeresistance device that has stable temperature property.
出处
《现代电子技术》
2003年第11期11-13,共3页
Modern Electronics Technique
