摘要
利用磁控溅射设备和光刻技术,采用金属等离子体氧化法,设计制作了10μm×15μm的Co/Al2O3/FeNi磁隧道结,并在77K下对其输运特性进行了研究。测得了11%的隧道磁电阻。随着外加电压增加,隧道结的磁电阻单调减小。测量了样品的I-V特性曲线,发现随着外加电压的增加,曲线逐渐偏离线性,电阻变小,这与理论相符合。电阻随温度变化曲线表明电阻随温度升高而减小,而且在210K处有一个拐点。表现出典型的隧穿过程的特征。
The Co/Al2O3/FeNi ferromagnetic tunneling junction of size of 10 μm× 15 μm is fabricated by magnetron sputtering and photolithography. Its transport properties at 77 K have been studied. The largest TMR is measured to be 11%. The TMR decreases monotonously with the applied voltage increasing. The I-V curve of the sample is measured. And it is found that the curve is gradually deviated from the linearity with the applied voltage increasing, i.e. the resistance become smaller which correspond to the existing theory. The curve between the resistance and the temperature shows that the resistance decreases with the temperature increasing and there is an inflexion point on the curve at 210 K. This is a typical tunneling process.
出处
《微细加工技术》
2003年第2期40-42,48,共4页
Microfabrication Technology
