摘要
介绍了一种用压埋法合成块状MgB2超导体的新方法。采用该方法得到的样品的临界温度可高达38 4K,与常规方法得到的样品的临界温度相近。对这种方法的合成工艺进行了探讨,发现烧结温度(Ts)和保温时间(t)对样品的临界温度影响很大。在相同的0 5h保温时间条件下,烧结温度在1073～1123K温区获得的样品临界温度最高。固定烧结温度(1123K),不同保温时间下获得的样品的临界温度随着保温时间的增加而降低。进一步对样品的剩余电阻率比(RRR)进行研究,实验结果表明随着RRR数值的增加临界转变温度下降。这可能与样品内过量的杂质有关。
A new synthesizing method of the bulk superconductor of MgB2 is reported. The critical temperature of the sample is as high as 384 K, similar to those prepared by the conventional ways. The experimental results indicate that the sintering temperature (Ts) and soaking time (τ) affect the critical temperature greatly. The samples sintered between 1 073 K and 1 123 K in half an hour show higher critical temperature. At 1 123 K, the critical temperature of samples decreases with increase of soaking time. The residual resistance ratio (RRR) is also investigated. The fact that the critical temperature decreases with increase of the value of RRR is associated with the excessive impurity.
出处
《南京工业大学学报（自然科学版）》
CAS
2003年第3期52-55,共4页
Journal of Nanjing Tech University(Natural Science Edition)
