摘要
本文介绍了用于硅栅CMOSIC园片级工艺诊断和可靠性监控的微电子测试图形。重点论述了(1)用于检测漏、源及多晶硅薄层电阻和因扩散及腐蚀引起的横向变化量的组合结构,(2)用于监测CMOSIC动态参数的结构设计及其对工艺的评价。
The microelectronic test patterns used for the process diagnosis and thereliability monitoring of silicon-gate CMOS IC are described; Discussions arefocused on: (1)the composite structures for measuring the sheet resistance of drain,source and poly-silicon, and the lateral variation produced during diffusion andetching; (2) the design of structures for monitoring the dynamic parameters ofCMOS IC and its application process evaluation.
出处
《华东师范大学学报（自然科学版）》
CAS
CSCD
1992年第1期53-63,共11页
Journal of East China Normal University(Natural Science)
