摘要
本文认为,Ⅰ层中不会有电子浓度和空穴浓度处处相等的电中性近似,这两种浓度都要随扩散距离的增加而衰减.本文用准中性条件来求解电子和空穴的连续性方程,导出这两种浓度都按扩散距离的负指数函数在Ⅰ层中分布.这样,其载流子一载流子散射效应可忽略不计,其俄歇复合较小,比用电中性近似求得的载流子分布的俄歇复合要小许多倍.
This paper thinks that. there is no charge neutrality approximation in the I-layer wherever the electron density is equal to the hole density. These two kinds of densities in the I-layer of a forward biased PIN diode will be decreased with the increasing of the diffusion distance. We use the quasi-neutrality condition to solve continuity equations of the electron and hole densities and obtain the electron and hole density distributions in the I-layer which are the negative exponential function of the diffusion dis- tance. The effect of the carrier-carrier scattering may then be neglected and the Auger recombination is much less than that of the carrier distribution obtained by using the neutrality approximation.
出处
《湖南大学学报（自然科学版）》
EI
CAS
CSCD
1992年第2期80-85,99,共7页
Journal of Hunan University:Natural Sciences
关键词
PIN二极管
载流子注入
电子浓度
electron density
hole
carrier injection/PIN diode
charge neutrality approximation
quasi-neutrality condition
