摘要
本文采用脉冲激光沉积 (PLD)法在Si衬底上生长c轴取向LiNbO3 (LN)晶体薄膜 ,研究氧气压强对薄膜质量的影响。结果表明 ,氧压是生长c轴择优取向LN薄膜的一个重要影响参数。X射线衍射和透射电子显微镜分析表明 ,氧压为 30Pa时生长得到了完全c轴取向的LN薄膜 ,LN(0 0 6 )衍射峰的半高宽为 0 2 1°。
A novel technique has been successfully developed to grow c oriented LiNbO 3(LN) films on silicon substrate by pulsed laser deposition(PLD) for the first time without buffer layers and application of external electric field.The microstructures and properties of the LN film were characterized with X ray diffraction (XRD) and transmission electron microscopy (TEM) to evaluate the influence of oxygen pressure on the growth of LN films.We found that oxygen pressure plays a dominant role in the c oriented LN film growth.XRD and TEM results show that 30 Pa is the optimized oxygen pressure in the growth of good quality,highly c oriented LN film.The full width at half maximum (FWHM) of the LN (006) diffraction was found to be only 0.21°.
出处
《真空科学与技术》
CSCD
北大核心
2003年第2期129-131,135,共4页
Vacuum Science and Technology
基金
国家自然科学基金重大研究规划项目资助 (No 90 10 10 0 9)
