摘要
Ta/Ni81Fe19和Ni81Fe19/Ta被广泛应用于磁电阻多层膜结构中。我们发现 ,在Ta/Ni81Fe19/Ta薄膜结构中 ,磁性“死层”的厚度大约为 1 6± 0 2nm。用X射线光电子能谱和图谱拟合技术研究Ta/Ni81Fe19和Ni81Fe19/Ta的界面成分和化学状态发现 ,在两上界面处都发生了反应 :2Ta +Ni=NiTa2 ,因此NiFe的有效厚度减少。利用这个反应也可以合理解释用分子束外延制备的自旋阀多层膜比用磁控溅射制备的自旋阀多层膜的“死层”
The thickness of magnetic dead layers, existing at the interfaces of either Ta/NiFe or NiFe/Ta films grown by magnetron sputtering, was measured to be about 1.6 ± 0.2 nm. The results of X-ray photoelectron spectroscopy (XPS) and data fitting show that the 2Ta+Ni=NiTa2 interaction of Ta with Ni at the interfaces of both Ta/NiFe and NiFe/Ta films markedly reduces the effective thickness of NiFe layer. The interfacial reaction of Ta with Ni may also account for the observation that molecular beam epitaxy (MBE) technique may grow the spin valves multi-layers with a much thinner magnetic deadlayer than magnetron sputtering.
出处
《真空科学与技术》
EI
CAS
CSCD
北大核心
2003年第2期88-90,139,共4页
Vacuum Science and Technology
基金
国家自然科学基金重大项目
编号 :19890 3 10
