摘要
介绍了目前比较流行的两种砷化镓EL2深能级结构模型,即Bourgoinde的As_(Ga)-As_i对模型和邹元爔的As_(Ga)V_(As)V_(Ga)三元络合物模型.分别计算了这两个模型的晶格振动态密度.为EL2深能级结构的最终确定提供了一些有用的信息.
Two current configuration models of deep level native defect EL2 in GaAs, i.e.
pair model As_(Ga)-As_i of Bourgoin and ternary complex As_(Ga)V_(As)V_(Ga) of Zou Yuanxi are in-
troduced. The densities of vibrational state for these two models are calculated. The differ-
ence between two kinds of density of state will provide useful information for final identifi-
cation of the configuration of EL2.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第5期371-374,共4页
Journal of Infrared and Millimeter Waves
关键词
砷化镓
EL2深能级
晶格
振动态
GaAS, EL2 deep level, density of vibrational state.
