摘要
从理论和实验上研究了分子束外延生长的PbTe/Pb_(0.88)Sn_(0.12)Te多量子阱结构材料中的持续光电导过程.认为材料中持续光电导的衰减是依赖于隧穿协助的电子-深中心复合过程.理论计算与实验结果一致.通过对持续光电导衰减规律的理论拟合,得到了PbTe/Pb_(0.88)Sn_(0.12)Te量子阱材料的导带不连续值及两类能谷间的能量差.
The low temperature permanent photoconductivity in PbTe/Pb_(0.88)Sn_(0.12)Te
multi-quantum wells grown by molecular beam epitaxy was studied both theoretically and
experimentally. The decay of the photoconductivity was analyzed in terms of tunneling-as-
sisted electron-trap recombination. The theoretical result agrees with the experimental one.
The band offsets of both the [111] valley and the others at PbTe/Pb_(0.88)Sn_(0.12)Te interfaces
were estimated by fitting the calculated decay curve of the photoconductivity to the experi-
ment data.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第5期361-366,共6页
Journal of Infrared and Millimeter Waves
关键词
分子束
光电导性
外延生长
碲化铅
PbTe/PbSnTe, molecular beam epitaxy, photoconductivity, tunneling-assisted recombination.
