摘要
研究了2K低温下非有意掺杂InP单晶的光致发光谱,对近带边的辐射跃迁进行了仔细分析,报道了InP单晶在大功率光激发时束缚于中性施主的激子跃迁发光相对减弱、而束缚于中性受主的激子跃迁发光相对增强的现象,并探讨了其机制,确认了材料中存在Mg、Zn等残余受主杂质,并计算得到Mg受主的离化能为41.5meV.
The results of photoluminescence investigation of nominally undoped bulk InP
at 2K are reported in this paper.The emissions near the band-gap are carefully analyzed.
It was found that the intensity of the peak due to exciton bound to the neutral donor
(D^0, X) decreases while the intensity of the peak due to the exciton bound to the neutral
acceptor (A^0, X) increases with increasing excitation power and its mechanism was pro-
posed. Mg and Zn were identified as residual acceptor impurities in the material. The
ionization energy calculated for Mg acceptor is 41.5 meV.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第5期420-424,共5页
Journal of Infrared and Millimeter Waves
关键词
光致发光
激子
磷化铟
跃迁
potoluminescence, InP, exciton, acceptor impurity.
