摘要
作者对晶体管的主要电参数在低温下进行了仔细的测试,发现电流放大系数变化很大.作者认为这主要由eb结两侧尤其是发射区杂质电离浓度随温度变化很大的缘故.
Same performance parameters of a transistor were measured carefully at low temperature. It is found that the current amplifier coefficient enters into signally
variation.A reasonable explanation might be that the concentration of ionized impurity varies rapidly with reducing temperature in bath sides ,specially the
emiter-region side of the e-b junction.
出处
《黑龙江大学自然科学学报》
CAS
1992年第2期80-84,共5页
Journal of Natural Science of Heilongjiang University
关键词
掺杂
发射效率
输运系数
晶体管
Impurity concentration, emiter efficiency transport factor
