摘要
本文用一个金属薄层夹在两个不同的半无限半导体之间的模型,在一个简立方金属和两个具有氯化铯结构的半导体的基础上发展了格林函数理论。首次得到了半导体—金属—半导体结构的格林函数。有了这些格林函数,可以使我们很容易地研究这样的系统所有的电子特性。作为应用例子,文中给出了局域界面态的计算。对两种特殊的半导体—金属—半导体双界面的研究表明,界面态可以存在,也可以不存在,取决于半导体的禁带和半导体与金属间的耦合强度。当存在界面态时,发现有两个界面态并且它们随金属薄层的原子层数的变化有一个非常相似于Ruderman-Kittel类型的振荡行为。
The model is formed out of one metallic slab sandwiched two different semi-infinitesemiconductors.The theory of the Creen's function is developed on one simple-cubic metal and two com-pound semiconductors of the cesium-chloride structure.The electronic Green's functions are obtained,forthe first time,for a semiconductor-metal-semiconductor system.Those enable us to study easily all theelectronic properties of such a system.An application is given here for the localised interface states.Twodistinct physical situations are considered for the semiconductor—metal—semiconductor interfaces showingthat the interface states may or may not exist depending upon the band gap of the semiconductors and thecoupling strength across the interfaces.Two interface states are found,under the condition that interfacestates exist,and these localised interface states have an oscillatory charactor very similar to theRuderman-kittel-type oscillation.
出处
《河南师范大学学报（自然科学版）》
CAS
CSCD
1992年第4期58-65,共8页
Journal of Henan Normal University(Natural Science Edition)
关键词
S-M-S系统
格林函数
半导体
金属
S-M-S system
Green's function
Localised interface states
