摘要
利用简化的半导体电学方程,数值模拟获得了各种电学参数的分布,并结合简化电阻模型,模拟了体硅、SOI及DSOI的MOSFET器件的温度场。结果表明MOSFET器件的沟道,特别是靠近漏的区域电场强度及电流密度等各项电、热特性参数在该区域变化剧烈,是最主要的热源区。
The electrical parameter distributions in Si, SOI and DSOI MOSFETs are simulated with simplified electrical equations and the temperature distributions are obtained either based on the electrical current distributions. The results show that the channel and its vicinity, especially near the drain where all parameters change sharply, is the most important part that determines the performance of the MOSFETs.
出处
《工程热物理学报》
EI
CAS
CSCD
北大核心
2003年第3期487-489,共3页
Journal of Engineering Thermophysics
基金
国家自然科学重点基金资助项目(No.59995550-1)
关键词
MOSFET
热模拟
电模拟
MOSFET, thermal simulation
electrical simulation
