摘要
对TiNi形状记忆合金N+离子注入后进行了XRD分析以及XPS分析。N+离子注入的能量为75keV,束流为16.3μA/cm2,注量分别为3×1017N+cm-2和8×1017N+cm-2,注入过程中温度低于200℃。XRD和XPS分析结果都表明:N+离子注入试样后以TiN的形式存在;且由于离子注入时的真空度较低,在注入层的表面也形成了少量的TiO2;由于Ni的溅射系数比Ti的大,在试样XPS宽程扫描图中,没有出现Ni的信号。
The TiNi shape memory alloy samples were implanted by 75 keV N+ with doses of 3 x 10(17)N(+) cm-(2) and 8 x 10(17)N(+) cm(-2) (dose rate 16.3 muA/cm(2)) at 200degreesC during the ion implantation. The samples were analyzed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy(XPS). The results showed that the TiN was formed after,the N+ ion implantation. Some TiO2 also formed in the surface of samples, due to the lower vacuum probably. Because the sputtering coefficient of Ni was bigger than that of Ti, so the Ni signal did not show in the XPS pattern between 0 and 1 000 eV.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2003年第4期309-312,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金资助项目(10175042)
