摘要
为提供一个在大范围内曝光出深亚微米甚至纳米级周期性密集图形的廉价的方法 ,研究了四激光束干涉光刻的原理 ,分析了干涉曝光的结果 ,并进行了计算机模拟 用现有的光源 ,如4 4 2nm、365nm、2 4 8nm、193nm激光 ,曝光得到的图形的临界尺寸容易做到 180～ 70nm 具有实际上无限制的焦深和容易实现的大视场 适合硅基CCDs。
For a cheaper and simpler way to expose deep sub-micrometer even nanometer dense periodic patterns over large size field, the principle of the interference lithography with four laser beams is studied, the results of interferentially exposing are analysed, and the simulation results by computer are given. The 180～70 nm critical dimension (CD) of exposed patterns can easilier be obtained by the light source such as the 442 nm, 365 nm, 248 nm and 193 nm lasers. The depth of focus is effectively infinite, and the large field size can more easily be fulfilled. It is suited for fabricating the deep sub-micrometer periodic patterns in large field size used in opto-eletronical components, such as the array of holes or dots in Si-based CCDs, the array of field emitters for flat panel displays, etc.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2003年第4期398-401,共4页
Acta Photonica Sinica
基金
国家自然科学基金 (60 0 760 19#)资助项目
