Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics
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1毛维,张进成,薛军帅,郝跃,马晓华,王冲,刘红侠,许晟瑞,杨林安,毕志伟,梁晓祯,张金风,匡贤伟.Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric[J].Chinese Physics Letters,2010,27(12):199-202.
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3徐火希,徐静平.Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La_2O_3 gate dielectric incorporated by N or/and Ti[J].Journal of Semiconductors,2016,37(6):77-80. 被引量：1
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6林宝勤,达新宇,赵尚弘,蒙文,李凡,郑秋容,王布宏.Low Frequency Ultra-Thin Compact Metamaterial Absorber Comprising Split-Ring Resonators[J].Chinese Physics Letters,2014,31(6):211-214.
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9KANGJinfeng,LIUXiaoyan,TIANDayu,WANGWei,LIANGuijun,XIONGGuangcheng,HANRuqi.The Post—deposition Anneal Effects on the Electrical Properties of HfO2 Gate Dielectric Deposited by Ion Beam Sputtering at Room Temperature[J].Chinese Journal of Electronics,2003,12(2):270-272.
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