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电子封装技术中金属基板结构的热失效行为研究 被引量:7

Study on the Thermal Failure of Metal Substrates in Electronic Packaging
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摘要 本文将电子散斑干涉与有限元数值计算相结合,对金属基板结构的热失效行为进行了研究.获得了低维氧化物绝缘薄膜的热失效温度,以及失效过程中基板表面的变形分布;测定了25μm厚度绝缘氧化薄膜的热膨胀系数、室温下弹性模量和失效应力等三个重要的材料常数;结合实验所测定的材料常数和研究的基板结构及性能,用有限元数值方法,模拟计算了绝缘氧化薄膜在不同缺陷形状时的失效过程,并给出了不同温度下绝缘氧化薄膜的最大应力集中值. Electronic speckle pattern interferometry (ESPI) and finite element method (FEM) calculation have been used to investigate the thermal failure behaviors of the metal substrate in electronic packaging. The failure temperature and thermal deformation of the substrate were obtained. Material constants, thermal coefficient of expansion, elasticity modulus and failure stress of the insulating film in the room temperature were realtime measured by using ESPI. Moreover, based on the measured film constants and substrate properties, FEM has been employed to simulate the failure evolution process. The diagram of stress concentrate values vs. temperature have also been conducted in this paper.
出处 《实验力学》 CSCD 北大核心 2003年第1期17-22,共6页 Journal of Experimental Mechanics
基金 国家自然科学基金资助项目10072031的资助
关键词 金属基板 绝缘氧化膜 热失效 电子散斑干涉 有限元数值计算 metal substrate insulating oxide film thermal failure ESPI FEM
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参考文献4

  • 1[1]Pascoli S D, Bagnoli P E, Casarosa C. Thermal analysis of insulated metal substrates for automotive electronic assemblies [J]. Microelectronics Journal, 1999, 30 (11): 1129-1135.
  • 2[2]Soloman D, Hoffman P, Brathwaite G, Robinson P. Thermal and electrical characterization of the metal ball grid array (MBGA) [C]. Proceeding of 45th Electronic Components & Technology Conference, 1995:1011-1015.
  • 3[3]VAEZI S M. Primary investigation of anodized aluminum as a substrate for hybrid microelectronics [J]. J. Electronics, 1990, 68(1): 59-68.
  • 4[4]Mu D, Jin Y. Study of anodized Al substrate for electronic packaging [J]. Journal of Materials Sience-Materials in Electronics, 2000,11(3): 239-242.

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