摘要
本文评述紫外成像器件技术现状。文中指出,Si-CCD的量子效率可接近或超过微通道板的量子效率,但在600～1200谱区存在着不灵敏层和沾污对表面的影响。
The state-of arts of image devices in UV are reviewed. It is concluded, that the quantum efficiency of Si-CCD_s can be approaching to or in excess of that of micro-channel plates, and that Si-CCD_s are affected by the insensitive layer and surface contamination especially in the spectral region from 600 to 1200.
出处
《激光与红外》
CAS
CSCD
北大核心
1989年第3期12-14,3,共4页
Laser & Infrared
