摘要
本文对近年来国际上研究较多的新三元红外探测器合金材料的性能及研究进展作了简要论述,特别注重了与碲镉汞材料的对比,同时讨论了用作各种外延的优质衬底材料CdZnTe晶体的现有水平。认为对于新三元窄禁带半导体HgMnTe及HgZnTe,国内应尽早进行技术跟踪研究,8～14μm光谱范围探测器材料的研究重点仍应继续放在HgCdTe材料上。对于优质外延衬底材料CdZnTe的研究,应在现有基础上继续深入下去。
A brief review on the properties and progress of the novel ternary alloys in comparison, with HgCdTe particularly for IR detectors, which are quite interested in the field recently and also a discussion about current level of the CdZnTe crystal as a superior substrate for various epitaxies are given in this papers. Authors suggest that the investigations of the novel narrow-gap ternary semiconductor materials, HgMnTe and HgZnTe, should be trailed technologically as soon as possible and IR detector material study in 8-14μm spectral region should be emphasized on HgCdTe constantly. The research of the CdZnTe as a superion substrate material for epitaxies should be deepened continuously based on the present level.
出处
《激光与红外》
CAS
CSCD
北大核心
1989年第2期1-4,共4页
Laser & Infrared
