摘要
本文介绍了两种用X—射线衍射结果定量分析Si_3N_4中α、β及游离Si相含量的方法.计算法简单、准确,查曲线法快速、方便.
The paper presents two analytical methods for determining α. β and free Si content in silicon nitride, both based on X-Ray diffraction result. The calculation method is accurate and the curve examination is rapid.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
1992年第5期62-65,47,共5页
Bulletin of the Chinese Ceramic Society
