摘要
将三阶微扰理论应用于单晶GaAs半导体,结合与实际相接近的能带结构,得到了GaAs中三光子吸收系数的解析式表达式,在考虑了激发电子的逃逸过程的情况下,进而推导了负电子亲和势GaAs光电阴极中三光子光电发射的发射系数的解析表达式.两表达式得到的理论数值分别与用ns量级脉宽、2.06μm波长的激光测得的GaAs中三光子吸收系数和GaAs(Cs,O)光电阴极中三光子发射系数的实验值相比较,吻合较好.
Three-order perturbation theory is used for the study of monocrystalline GaAs. Under an assumption of a simplified but more realistic band structure of GaAs crystal, formulas of three-photon absorption coefficient are obtained. And further more, after the escape process of an excited electron being considered, formulas of thr ee-photon photoemission coefficient on a NEA GaAs photocathode are derived. The comparisons of theoretical calculated values with experimental ones are given. The experimental values are obtained by using a 2.06μm ns pulse Q-switched laser. The theoretical values fit the experimental ones satisfactorily.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1992年第2期168-174,共7页
Acta Optica Sinica
基金
国家自然科学基金会资助的项目
关键词
微扰
吸收
发射
GaAs半导体
多光子
three-order perturbation theory
three-photon absorption coefficient
three-photon photoemission coefficient
GaAs semiconductor
negative clectron affinity GaAs photooathode.
