摘要
采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料 ,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPNInGaP/GaAsSb/GaAs双异质结晶体管 (doubleheterojunctionbipolartransistor,DHBT) .器件性能如下 :BE结的正向开启电压 (turn onvoltage)仅为 0 73V ;当IB=1μA/step时 ,直流增益达到了 10 0 ,BVCEO=5～ 6V .通过对基区不同Sb含量器件的比较得到 ,器件的直流特性与基区Sb的含量有关 .
A NPN InGaP/GaAsSb/GaAs double heterojunction bipolar transistor with low turn-on voltage is fabricated using GaAsSb as the narrow band gap material for the base layer of GaAs HBTs.The devices have a great potential for reducing operating voltage and power dissipation.The turn-on voltage of the InGaP/GaAsSb/GaAs DHBT is only 0.73V,the DC current gain is about 100 and the breakdown voltage of emitter-collector BV CEO is 5～6V at a base current step of I B=1μA.Moreover,the results show that the DC performances of the DHBT are related to the percentage of the Sb in GaAsSb.
