摘要
在金属有机物气相外延 (MOVPE)方法生长的非故意掺杂的n GaN上用Pt制成了肖特基接触 ,并在 2 5 0～6 5 0℃范围内对该接触进行退火 .通过实验发现 ,Pt与非故意掺杂n GaN外延薄膜可以形成较好的肖特基接触 ,而适当的退火温度可以有效地改善Pt/n GaN肖特基接触的性质 .在该实验条件下 ,40 0℃温度下退火后的Pt/n GaN肖特基接触 ,势垒高度最大 ,理想因子最小 .在 6 0 0℃以上温度退火后 ,该接触特性受到破坏 ,SEM显示在该温度下 ,Pt已经在GaN表面凝聚成球 ,表面形成孔洞 .
Pt film (100nm) is deposited on unintentional doped n-GaN grown by metalorganic vapor phase epitaxy (MOVPE) to form metal/semiconductor contacts,and these contacts are annealed at 250～650℃ in the ambient gas of N 2.It is found that these contacts show rectifying Schottky behavior.The characteristic of these contact is improved when annealed under the temperature of 400℃.The Schottky contacts are destroyed if the annealing temperature is above 600℃,and SEM shows that the Pt particles agglomerated on the surface of GaN under such higher temperatures.
基金
国家自然科学基金 (批准号 :6 982 5 10 7)
NSFC-RGC联合基金 (批准号 :5 0 0 116 195 3
N_HKU0 2 8/ 0 0 )资助项目~~
