摘要
用两波混频方法在514.5nm(氩离子激光器)对BSO晶体中光折变增益与入射面情况的依赖关系进行了研究,由于BSO晶体围绕<110>轴旋转时受主能级状态的影响,从而光折变增益将取决于衍射效率的改变。
Dependence of the photorefractive gain in Bi_(12)SiO_(20) (BSO) crystal on the situation of an incident plane was studied with a two-wave mixing method at 514.5nm (Ar^+ laser). Since the positions of an acceptor level change by rotating BSO crystal around <110> axis, the photorefracitve gain would depend on the changes of diffraction efficiency.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
1992年第1期1-3,共3页
Spectroscopy and Spectral Analysis
