摘要
提出基于阳极腐蚀的多孔硅的形成同时包含多孔硅的形成和电抛光体硅两部分组成 .把电抛光体硅的电流密度Je 与总的腐蚀电流密度J的比值定义为抛光因子α .推导出了多孔硅的成长速度与腐蚀电流密度、多孔度和抛光因子α之间的关系式 .在实验误差的范围内 ,三组文献提供的实验数据验证了本文结论的正确性 .
This paper proposed that the electrochemical etching of silicon(Si) wafers in electrolytes on the base of hydrofluoric acid (HF)solution simultaneously consisted of the formation of porous silicon and electro-polishing bulk Si.A factor α is defined as the ratio of the current density of the electro-polishing bulk Si over the total current density of the electrochemical etching.The relationships are deduced about the rate of PS growth,the total current density,porosity and the factor α.These results were well checked against three group experimental data in the errors,and be truly attested.
基金
常德师范学院院基金 ( 2 0 0 3年度 )资助 .
