摘要
用反应粘接的方法获得了反应烧结碳化硅材料之间、反应烧结碳化硅和重结晶碳化硅材料间的连接。分析了反应粘接碳化硅材料接头的形成机理 ,分别在光学显微镜、扫描电镜下观察了连接区的显微组织和断口形貌 ,评价了反应粘接硅 /碳化硅材料接头的力学和电性能。研究结果表明 ,反应粘接可以使母材间形成良好的接合界面 ,连接层未对整体材料的强度和电阻率造成明显的影响。
The joints between reaction-sintered silicon carbide and recrystallized silicon carbide materials have been obtained using a reaction bonding approach. The forming mechanism of reaction-bonded joints of silicon carbide materials was analyzed. The microstructures in the joint areas and the fracture morphology were observed by optical microscope, and scanning electron microscope (SEM) respectively. The mechanical and electrical properties of the reaction-forming joints were evaluated. This study showed that a good contact interlayer was formed between monolithic materials by this method,and the flexural strength and electrical resistivity of silicon/ silicon carbide bulk materials were not affected significantly by the reaction-forming joints. It's a key to optimize the joining layer microstructure and composition for obtaining high performance joints.
出处
《兵器材料科学与工程》
CAS
CSCD
2003年第1期51-54,共4页
Ordnance Material Science and Engineering
