摘要
提出用束传播法设计具有锥形波导吸收区的超幅射发光二极管(SLD)。针对用液相外延生长的InGaAsP/InP双沟平面隐埋异质结SLD,给出SLD性能随锥角、锥形区长度及有源区宽度变化的关系。在此基础上,选出一组最佳参数,假定锥形区后端面反射率为1.0,忽略吸收区的吸收,得到由吸收区后端面反射耦入有源区的波的强度仅为有源区前端面入射波强度的4%。
A new type of superluminescent diode (SLD) with a tapered waveguide absorbing region is designed by BPM for InGaAsP/InP double channeled planar buried-heterostructure(DCPBH). The reflecting energy from the absorbing region that can be recoupled into the pumped region changes with the tapered angle, the width of the pumped region waveguide and the length of absorbing region. Optimum device parameters are determined by BPM. When the reflectivity of the end facet and absorbing coefficient in the absorbing region are assumed to be 1.0 and respectively, the light that can be recoupled into the waveguide is only 4%.
出处
《高技术通讯》
EI
CAS
CSCD
1992年第11期1-3,共3页
Chinese High Technology Letters
基金
八六三计划资助课题
关键词
束传播法
发光二极管
设计
半导体
BPM
Effective Refranctive Index Method
SLD
DCPBH
