摘要
主要研究了Ar^+、As^+离子注入PET薄膜后对其导电性能的影响及其导电机理。在PET膜上分别注入了不同种类、不同剂量的离子,测定了其注入后的表面电阻率,研究了注入离子后薄膜表面电阻率与温度的关系,根据注入前后的FTIR-ATR谱图及有关理论对其导电机理进行了初步探讨。结果表明,随离子注入的种类不同、剂量的变化、温度的升降,PET膜的表面电阻率呈规律性变化。根据薄膜结构分析初步确认离子注入PET薄膜主要是离子导电。
In this paper,the conducting properties and mechanism of the Ar+ and As+ ion-implanted PET thin film were studied. Different dose and kinds of ions were implanter into the PET thin film respectively,while the specific surface resistance of the film was measured. Moreover,the relation between the specific surface resistance and temperature under the same dose of implanting ions was invertigated,and the conducting mechanism of the ions-implanted PET thin film was primarily studied by the infrared spectrum and some relevant theories. The results show that the specific surface resistance of the PET film decreases regularly with increasing implanting dose and growing temperature. Accoding to the structure analysis ,the conducting carriers of the ion-implanted PET are mainly ions.
出处
《高分子材料科学与工程》
EI
CAS
CSCD
北大核心
1992年第2期93-97,共5页
Polymer Materials Science & Engineering
基金
国家自然科学基金
