摘要
主要研究了晶粒助长剂TiO2、烧成条件等对ZnO低压压敏陶瓷电性能的影响。结果表明:TiO2的掺入能显著促进晶粒生长,降低压敏电压V1mA,但掺入量超过一定值后一方面会生成阻止晶粒继续生长的晶界反应层,促使压敏电压又有所升高,另一方面会生成钛酸铋立方相而引起富铋晶界相含量的减少,导致非线性特性下降。提高烧成温度可以促进晶粒生长,降低压敏电压,但温度过高时由于铋的挥发加剧,利用提高烧成温度降低压敏电压会引起非线性特性和漏流等性能的劣化。
The influence of TiO2 and sintering condition on the electrical properties of ZnO varistor ceramics was studied. The results showed that when the doping TiO2 is less than 0.5% ,the grain size will be enlarged and the varistor voltage V1 mA will be decreased with little change of nonlinear coefficient a. However, if the addition is more than 0.5% ,the breakdown voltage will have a little increase and the nonlinearity will be sharply decreased. A high sintering temperature will promote the growth of grains, but when the sintering temperature is higher than 1 200 ℃ ,the nonlinearity and other electrical properties will worsen. The experimental data are analysed and discussed in detail in the paper.
出处
《南京工业大学学报（自然科学版）》
CAS
2003年第1期59-62,共4页
Journal of Nanjing Tech University(Natural Science Edition)
