摘要
提出了一种在微米尺度下测量物体面内位移的新型扫描离子束云纹法。对该方法的测量原理以及变形测量的精度进行了阐述。以平行云纹和转角云纹为典型实验对该方法的测量精度进行了检验。该方法成功地应用于微电子系统结构在去除SiO2牺牲层后的残余变形测量。实验结果证实了该方法的可行性。
A new scanning ion beam (SIB) moiré method is proposed to measure the in plane deformation of object in a micrometer scale. The principle of the SIB moiré and the accuracy of deformation measurement are discussed. Typical tests using parallel and rotation moiré were conducted. The result verifies high measurement accuracy can be reached with this method. The FIB moiré method is successfully used to measure the residual deformation in a micro electro mechanical system (MEMS) structure after removing the SiO 2 sacrificial layer with a 5000 lines/mm grating. The results demonstrate the feasibility of this method.
出处
《光学技术》
CAS
CSCD
2003年第1期23-26,共4页
Optical Technique
基金
国家自然科学基金资助项目(19472038)
清华大学振动与结构工程开放实验室基金
关键词
扫描离子束云纹法
高频光栅
应变
微电子机械系统
面内变形
scanning ion beam moiré method
strain
micro electro mechanical system (MEMS)
in plane strain
