摘要
本文提出了一种新的离子注入短沟道GaAsMESFET直流解析模型,并将解析模型与实验数据进行了比较。结果表明,本文提出的解析模型可以同时描述高、中和低夹断电压的短沟道离子注入GaAs MESFET直流特性.
A new analytical model of a short-channel GaAs MESFET with ion implantation doping is proposed. The model is compared with experiments. The results show that this model would be applied to a simulation of ion-implanted GaAs MESFET's for high, middle and low pinchoff voltages simultaneously.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
1992年第6期23-29,共7页
Journal of Southeast University：Natural Science Edition
关键词
离子注入
晶体管模型
MESFET
GAAS
metal-semiconductor field effect transistors/Ion implantation, FET model
