摘要
目的:观察半导体激光与氟化钠对牙本质过敏症的临床疗效,及优缺点进行比较,探讨其作用机理;方法:牙本质过敏患牙408颗随机分成两组,一组用常规氟化钠脱敏,一组用半导体激光治疗。激光组采用MDC—500型半导体激光治疗仪,波长830nm,输出功率0mW～500mW连续可调,光斑直径3 mm。先用探针确定过敏位置及范围,再用已消毒的激光治疗仪导光棒直接接触照射患牙敏感区,输出功率200—300mW,每次3分钟,3～5次为一疗程。若敏感区较大.可多点照射直至全部覆盖;结果:用半导体激光治疗的患牙,一次照射疼痛缓解率为100％,一疗程后总显效率为89.2％;氟化钠治疗组,即刻疼痛缓解率为75％,两者有显著性差异(P<0.01)结论:半导体激光对牙本质过敏症有很好的疗效,优于氟化钠治疗。
objective: To study clinical results and the mechanism in the treatment of hypersensitive dentine using semiconductor laser and NaF, and the comparation study was made in the advantages and disadvantages of the two treatments mechanism methods: 408 teeth with hypersensitive dentine were randomly divided into two groups. One group was treated with semiconductor laser another was treated with conventional NaF. the MDC-500, 0-500 mW semiconduct or laser device was used which the wave length was 830 nm and the diameter of the laser was 3 mm. After drying the hypersensitive dentine as much as possible, the disinfected laser tip was placed in direct contact with the hypersensitive tooth surface, which was the irradiated at 200~300 mW for 3 minutes. If the area of the hypersensitive surface was larger gave other irradiation. The treatment was carried out for about 3~5 times at 1~2 days interval. Result: 100% cases showed a pain reduction in hypersensitive. The efficiency of the irradiation treatment was 89.2%, while NaF group was 75%. There was marked difference between two groups(P< 0.01). Conclusion: the study showed: it was a effective method to treat hypersensitivity with semiconductor laser.
出处
《中国医学物理学杂志》
CSCD
2003年第1期21-22,共2页
Chinese Journal of Medical Physics
