摘要
本文对光栅外腔主动锁模半导体激光器输出脉冲及其光谱进行了详细的实验研究.对影响完全锁模光脉冲宽度的若干因素进行优化组合,由正弦调制的普通DH-GaAlAs光栅外腔激光器得到了最短光脉冲宽度为8.2ps,重复频率为961.06MHz,峰值功率大于150mW,谱调谐范围大于10nm的锁模输出.
The properties, such as output pulse width and spectrum of actively mode-loc-'king semiconductor laser with an external grating cavity are studied in detail. The Optimization process of the parameters of the device influencing the pulse width is given. With sinusoidal microwave modulation, a fully mode-locked pulse train is obtained with the FWHM as short as 8.2ps, repeated frequency 961.06MHz, peak power greater than 150mW and tuning range greater than 10nm.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1992年第11期45-50,共6页
Acta Electronica Sinica
关键词
光栅外腔
主动锁模
半导体激光
External grating cavity, Active mode locking, Semiconductor laser
