摘要
分析了影响列阵半导体激光器极限输出功率的因素。利用MOCVD研制了无铝双量子阱列阵半导体激光器。无铝列阵激光器的峰值波长为 940 2nm ,半峰宽为 2nm ,连续输出功率为 10W ,斜率效率为 1 0 9W A。
The factors which influence the ultimate output power of semiconductor laser are analyzed. The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD. As a result, the peak wavelength of the aluminum-free two-quantum-well semiconductor laser is 940 2 nm, the full-width-half-maximum (FWHM) is 2 nm, the continuous output power is 10 W, and the incremental efficiency is 1 09 W/A.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2002年第12期1061-1063,共3页
Chinese Journal of Lasers
关键词
量子阱
半导体激光器
列阵
quantum well, semiconductor laser, array
