摘要
本文从器件物理和结构上提出双极型晶体管非线性失真模型。模型包含8个参量:(1)有效基区展宽效应;(2)发射极电流集边效应;(3)基区电导调制效应;(4)发射结电阻的非线性效应;(5)发射结电容的非线性效应;(6)集电结电容的非线性效应;(7)寄生电容的非线性效应;(8)电流放大系数和雪崩倍增效应与电压的非线性关系。利用Taylor级数展开分析各模型参数,并编制了计算程序,定量计算了互调失真与工作频率、发射极条宽、基区宽度、发射极线电流密度,基区掺杂浓度等重要参数的关系。计算结果与实验结果基本吻合。
An AC small-signal transistor model incorporating 8 nonlinearities using Taylor series representations is described. Based on this method, a nonlinear distortion-analysis program has been developed. It is used to compute the third-order intermodulation distortion IMs. The relations between IM3 and the operating frequency, emitter and base widths, emitter line current density and doped impurity concentration on base are obtained.
关键词
晶体管
失真
非线性分析
Bipolar transistor
Distortion
Nonlinear analysis
