摘要
论文对合肥同步辐射光源开展深度X 射线光刻进行了理论模拟 .利用Gauss积分法研究了菲涅耳衍射对深度光刻图形精度的影响 .为了模拟衬底产生的光电子对光刻结果的影响 ,构建了一个MonteCarlo模型并进行了模拟 .计算结果表明 。
In this paper the accuracy of deep X ray Lithography at the National Synchrotron Radiation Lab(NSRL) is investigated in theory. A Gauss function was constructed to investigate the Fresnel diffraction. A Monte Carlo model was constructed to simulate the photo electrons. Different depths of PMMA were simulated by the Gauss function with the LIGA beam line at NSRL. The effect of the photo electrons produced by substrate was simulated by Monte Carlo model. The result shows that the silicon substrate has little effect on accuracy.
基金
国家重点基础研究发展规划课题 (G19990 3310 9)资助项目
