摘要
在电力电子器件向高功率密度演进的过程中,封装互连可靠性是制约其使用寿命与性能发挥的关键瓶颈。尤其对于应用于大电流环境下的绝缘栅双极型晶体管(IGBT)模块,其各类可靠性问题更加凸显。近年来学者提出的一系列光滑有限元方法(S-FEM)中,基于边的光滑有限元法(ES-FEM)具有较低的网格畸变敏感性和更好的时域稳定性,展现出更高的计算精度。将ES-FEM拓展至多物理场耦合仿真领域,提出一种新型的电热力仿真方法,并通过IGBT模块算例与有限元方法(FEM)进行对比分析,验证该新型仿真方法的有效性和高效性。研究结果表明,在采用相同网格划分时,ES-FEM可获得比FEM更精确的结果。
With the evolution of power electronic devices towards higher power density,the reliability of packaging and interconnection is a key bottleneck restricting their service life and performance.In particular,for insulated gate bipolar transistor(IGBT)modules operating under high-current conditions,various reliability issues become even more pronounced.Among the series of smoothed finite element method(S-FEM)variants proposed by scholars in recent years,the edge-based smoothed finite element method(ES-FEM)features lower sensitivity to mesh distortion and superior temporal stability,and exhibits higher computational accuracy.ES-FEM is extended to the field of multi-physics coupling simulation,and a novel electro-thermo-mechanical simulation method is proposed.The effectiveness and efficiency of the proposed method are verified through comparative analysis with the finite element method(FEM)via numerical case studies of an IGBT module.The results demonstrate that,with identical mesh discretization,ES-FEM yields more accurate results than FEM.
作者
高方腾
陈沛
杨茗勋
秦飞
GAO Fangteng;CHEN Pei;YANG Mingxun;QIN Fei(Institute of Electronics Packaging Technology and Reliability,Beijing University of Technology,Beijing 100124,China)
出处
《电子与封装》
2026年第3期44-50,共7页
Electronics & Packaging
基金
北京市自然科学基金-小米创新联合基金(L233001)。
关键词
基于边的光滑有限元法
多物理场耦合
绝缘栅双极型晶体管
edge-based smoothed finite element method
multi-physics coupling
insulated gate bipolar transistor
