摘要
碳化硅(SiC)器件与传统硅基IGBT器件相比,开关频率显著提高,能够提升整体装置的功率密度和效率。合理的SiC MOSFET驱动是确保装置安全、可靠、高效运行的基础。对SiC MOSFET的开关过程及原理进行了分析,根据SiC MOSFET自身特性参数,对驱动器设计要求进行分解与计算,提出了基于ADuM4146的SiC MOSFET驱动器电路设计方案,针对驱动电路与保护策略进行了全面解析。实验结果显示,基于ADuM4146的SiC MOSFET驱动器拥有良好的驱动波形,且具备有效的短路保护能力,可为大功率装备应用奠定基础。
Compared to traditional silicon-based IGBT devices,silicon carbide(SiC)devices offer significantly higher switching frequencies,which improve power density and overall efficiency.Proper SiC MOSFET driven is essential to ensure the safe,reliable,and efficient operation of the device.By analyzing the switching process and principles of SiC MOSFETs,the driver design requirements are decomposed and calculated according to the characteristic parameters of the SiC MOSFET,and a scheme of SiC MOSFET driver circuit design based on the ADuM4146 is proposed.The driver circuit and protection strategy are analyzed comprehensively.The experimental results show that the SiC MOSFET driver based on the ADuM4146 has clean driving waveform and effective short-circuit protection,laying the foundation for the applications of high-power equipments.
作者
周荣
田鸿昌
陈彦光
ZHOU Rong;TIAN Hongchang;CHEN Yanguang(China Electrical Equipment Research Institute of Science and Technology Co.,Ltd.,Shanghai 200000,China)
出处
《现代电子技术》
北大核心
2026年第4期13-20,共8页
Modern Electronics Technique
