摘要
用注量为 1.2× 10 12 ～ 1.2× 10 13 cm-2 的低能量 (0 .5 Me V)质子辐照空间实用 Ga As/ Ge太阳电池 ,电池被覆盖有 4种情况 :10 0 %玻璃覆盖 ,5 %部分无玻璃覆盖有封胶 ,5 %部分无玻璃覆盖无封胶 ,10 0 %无玻璃覆盖 .研究表明 ,电池性能衰降随着质子辐照注量的增加而增大 ,但性能参数 Isc和 Uoc衰降程度 4种覆盖情况是不同的 :10 0 %覆盖 ,电池性能衰降最弱 ;5 %部分无玻璃覆盖有封胶 ,性能衰降较弱 ;5 %部分无玻璃覆盖无封胶 ,衰降较强 ;10 0 %无覆盖性能衰降最大 .研究还表明 ,相同的质子辐照注量引起的 Isc衰降变化比 Uoc变化显著 ;未覆盖部分仅占 5 % ,也会引起电池性能明显衰降 .
MeV proton irradiation effects on GaAs/Ge solar cells for space use are studied with four covered cases with different glass area at fluences ranging from 1. 2×10 12 to 1. 2×10 13 cm -2. The parameters I sc and U oc of the cell performance degrade as the proton irradiation fluence increases, but the degradation of I sc and U oc is different to four covered cases with glass. The degradation is the least for 100% covered with glass and the degradation is the worst for 100% no glass. For the part covered with 95% glass the degradation is between them. Glue layer also can reduce proton irradiation effect. The change of degradation of I sc is more than the change of degradation of U oc at the same fluence. Even though non-covered part is only 5%, 0. 5 MeV proton irradiation gives rise to clear degradation of cell performance.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2002年第6期764-767,共4页
Journal of Beijing Normal University(Natural Science)
基金
教育部重点实验室基金资助项目
国家"八六三"计划资助项目
北京市科学技术研究院萌芽计划基金资助项目
