摘要
Resonant tunneling diodes(RTDs)exhibit a distinctive characteristic known as negative resistance.Accurately calculating the tunneling bias energy is indispensable for the design of quantum devices.This paper conducts a thorough investigation into the currentvoltage(Ⅰ-Ⅴ)characteristics of RTDs utilizing various numerical methods.Through a series of numerical experiments,we verified that the transfer matrix method ensures robust convergence in Ⅰ-Ⅴcurves and proficiently determines the tunneling bias for energy potential functions with discontinuities.Our numerical analysis underscores the significant impact of variations in effective mass on Ⅰ-Ⅴ curves,emphasizing the need to consider this effect.Furthermore,we observe that increasing the doping concentration results in a reduction in tunneling bias and an enhancement in peak current.Leveraging the unique features of the Ⅰ-Ⅴ curve,we employ shallow neural networks to accurately fit the Ⅰ-Ⅴ curves,yielding satisfactory results with limited data.
基金
supported in part by the National Natural Science Foundation of China(Grant Nos.12171035,12371389,12471378)
by the Natural Science Foundation of Guangdong Province of China(Grant No.2024A1515010356).
