摘要
With the development of high-frequency communication technologies,polyimide(PI)materials with a low dielectric constant(Dk)and low dissipation factor(Df)are urgently needed to reduce signal crosstalk and other transmission problems.The introduction of a trifluoromethyl group is a common strategy to reduce Dk and Df,but the bulky trifluoromethyl group would diminish stacking density and consequently lead to inferior mechanical properties.Herein,a novel diamine monomer,2,3,4,5,6-pentafluororo-3,5-bis(4-aminophenoxy)-1,1-biphenyl(5FBODA),was designed and synthesized using simple reactions.Subsequently,fluorinated diamine and dianhydride were copolymerized with 5FBODA to obtain a series of fluorinated polyimide(FPI)with excellent dielectric properties and good mechanical performances,particularly high elongation at break.The pentafluorophenyl side group showed an obvious electronwithdrawing effect and made the charge of the structure more balanced,which reduced the molecular polarization rate and charge concentration to some extent,significantly helping in reducing Dk at high frequency.As the 5FBODA content increased,the large lateral group restricted the movement of the main chain,constrained the dipole polarization,thereby effectively diminishing their Df.Moreover,when 20-30%5FBODA was added,the pentafluorophenyl side group increased the intermolecular forces,thereby enhancing the elongation at break while maintaining good thermal properties.These FPIs exhibited remarkable advantages for advanced microelectronic packaging applications,providing an innovative solution for the development of next-generation high-performance electronic materials.
基金
supported by the National Natural Science Foundation of China(62304141,62174170,62404140)
Guangdong Basic and Applied Basic Research(2023A1515010766,2022B1515120037)
Key Area Research and Development program of Guangdong Province(2024B0101120001,2023B0101030001)
Shenzhen Science and Technology Program(20220807020526001)
Autonomous deployment project of China National Key Laboratory of Materials for Integrated Circuits(No.NKLJCZ2023-A05)
The SIAT Innovation Program for Excellent Young.
